ds23019 rev. 7 - 2 1 of 2 mbr4030pt - mbr4060pt www.diodes.com diodes incorporated mbr4030pt - mbr4060pt 40a schottky barrier rectifier features a b e g j l m n p q k s m h r d c maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified schottky barrier chip guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications mechanical data case: molded plastic plastic material: ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: plated leads solderable per mil-std-202, method 208 polarity: as marked on body marking: type number weight: 5.6 grams (approx.) single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbr 4030pt mbr 4035pt mbr 4040pt mbr 4045pt mbr 4050pt mbr 4060pt unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current @ t c = 125 c (note 1) i o 40 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 400 a forward voltage drop @ i f = 20a, t c = 25 c @ i f = 20a, t c = 125 c v fm 0.70 0.60 0.80 0.70 v peak reverse current @ t c = 25 c at rated dc blocking voltage @ t c = 125 c i rm 1.0 100 ma typical total capacitance (note 2) c t 1100 pf typical thermal resistance junction to case (note 1) r jc 1.4 c/w voltage rate of change (rated v r ) dv/dt 10,000 v/ s operating and storage temperature range t j, t stg -65 to +150 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. to-3p dim min max a 1.88 2.08 b 4.68 5.36 c 20.63 22.38 d 18.5 21.5 e 2.1 2.4 g 0.51 0.76 h 15.38 16.25 j 1.90 2.70 k 2.9 3.65 l 3.78 4.50 m 5.2 5.7 n 0.89 1.53 p 1.82 2.46 q 2.92 3.23 r 11.70 12.84 s 6.10 all dimensions in mm
ds23019 rev. 7 - 2 2 of 2 mbr4030pt - mbr4060pt www.diodes.com i , instantaneous forward current (a) f v , instantaneous forward voltage (v) f fi g . 2 t y pical forward characteristics ( per element ) mbr 4030pt - mbr4045pt mbr4050pt - mbr4060pt 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1.0 10 100 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fi g . 3 max non-repetitive sur g e current 100 200 300 4 00 8.3 ms single half sine-wave (jedec method) 100 1000 4 000 110 c , capacitance (pf) t v , reverse voltage (v) r fi g .4 t y pical total capacitance t = 25c j f = 1 mhz 100 0.1 0.001 0.01 0.1 1.0 0 20 40 60 80 100 120 140 percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics t = 125c c t = 75c c t = 25c c 10 t = 25c j 050100150 i , average forward current (a) (av) t , case temperature (c) c fi g . 1 forward current deratin g curve 0 30 10 20 40 5 0
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